Measurement of the properties of GaN layers using terahertz time-domain spectroscopic ellipsometry-Reference-Cited by-同舟云学术

Measurement of the properties of GaN layers using terahertz time-domain spectroscopic ellipsometry

Published:2017-07-17 Issue:8 Volume:254 Page:1600767
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Tachi Kohei¹,Asagami Shiho¹,Fujii Takashi¹²,Araki Tsutomu¹,Nanishi Yasushi¹,Nagashima Takeshi³,Iwamoto Toshiyuki²,Sato Yukinori²,Morita Naotake⁴,Sugie Ryuichi⁴,Kamiyama Satoshi⁵

Affiliation:

1. Department of Electrical and Electronic Engineering; Ritsumeikan University; 1-1-1 Noji-Higashi Kusatsu Shiga 525-8577 Japan

2. Second Design Department; Nippo Precision Co., Ltd.; 734, Miyakubo, Hosaka, Nirasaki Yamanashi 407-0175 Japan

3. Faculty of Science and Engineering; Setsunan University; 17-8 Ikedanaka, Neyagawa Osaka 572-8508 Japan

4. Material Science Laboratory; Toray Research Center, Inc.; 3-3-7 Sonoyama, Otsu Shiga 520-8567 Japan

5. Department of Materials Science and Engineering; Meijo University; 1-501 Shiogamaguchi, Tenpaku-ku Aichi 468-8502 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. InGaN/AlGaN blue‐light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

4. Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes

5. A review of the metal–GaN contact technology

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