Material properties of Ga0.47In0.53As grown on InP by low‐temperature molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107587
Reference12 articles.
1. Properties and applications of AlxGa1−xAs (0 ≤ χ ≤1) grown at low temperatures
2. Growth temperature dependence in molecular beam epitaxy of gallium arsenide
3. Deep states in GaAs grown by molecular beam epitaxy
4. The effect of substrate growth temperature on deep levels inn‐AlxGa1−xAs grown by molecular beam epitaxy
5. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
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