Deep states in GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334040
Reference30 articles.
1. Study of electron traps inn‐GaAs grown by molecular beam epitaxy
2. Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs
3. A correlation between electron traps and growth processes inn‐GaAs prepared by molecular beam epitaxy
4. Constant‐capacitance DLTS measurement of defect‐density profiles in semiconductors
5. Electron traps in bulk and epitaxial GaAs crystals
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