The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)-Reference-Cited by-同舟云学术

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

Published:2009-02 Issue:3 Volume:105 Page:033701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Baron N.,Cordier Y.,Chenot S.,Vennéguès P.,Tottereau O.,Leroux M.,Semond F.,Massies J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3063698

Reference35 articles.

1. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates

2. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

3. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

4. In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy

5. Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

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