Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors-Reference-Cited by-同舟云学术

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Published:2022-02 Issue: Volume:188 Page:108210
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ngo Thi Huong,Comyn Rémi,Chenot Sébastien,Brault Julien,Damilano Benjamin,Vézian Stéphane,Frayssinet Eric,Cozette Flavien,Defrance Nicolas,Lecourt François,Labat Nathalie,Maher Hassan,Cordier Yvon

Funder

Agence nationale de la recherche

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

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3. Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate;Altuntas;IEEE Electron Device Lett.,2015

4. A Dual-Mode Driver IC with Monolithic Negative Drive-Voltage Capability and Digital Current-Mode Controller for Depletion-Mode GaN HEMT;Wen;IEEE Trans Power Electron,2017

5. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance;Rongming Chu;IEEE Electron Device Lett.,2011

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1. Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region;Solid-State Electronics;2024-10

2. Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique;physica status solidi (a);2023-06

3. Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology;Crystals;2023-05-13

4. Novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion;CrystEngComm;2023

5. Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review;Crystals;2022-11-07