Effects of native defects on carrier concentrations in heavily Si-doped and adjoining lightly doped GaAs layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364030
Reference16 articles.
1. Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy
2. Redistribution of Zn in GaAs‐AlGaAs heterojunction bipolar transistor structures
3. Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy
4. Amphoteric native defects in semiconductors
5. Carrier scattering by native defects in heavily doped semiconductors
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