The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering
2. Observation of compensating Ga vacancies in highly Si-doped GaAs
3. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
4. Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy
5. Effects of native defects on carrier concentrations in heavily Si-doped and adjoining lightly doped GaAs layers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors;Journal of Crystal Growth;2008-11
2. Si-related defects in InGaP/GaAs heterojunction bipolar transistors;Physica B: Condensed Matter;2007-12
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