Redistribution of Zn in GaAs‐AlGaAs heterojunction bipolar transistor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102528
Reference13 articles.
1. High-speed frequency dividers using self-aligned AlGaAs/GaAs heterojunction bipolar transistors
2. High-speed divider using GaAs ECL/CML gate array
3. Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz
4. Near‐ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy
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