Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps-Reference-Cited by-同舟云学术

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

Published:2015-08-03 Issue:5 Volume:107 Page:053504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vais Abhitosh¹²,Lin Han-Chung²,Dou Chunmeng³,Martens Koen¹²,Ivanov Tsvetan²,Xie Qi⁴,Tang Fu⁵,Givens Michael⁵,Maes Jan⁴,Collaert Nadine²,Raskin Jean-Pierre⁶,DeMeyer Kristin¹²,Thean Aaron²

Affiliation:

1. Department of Electrical Engineering, KU Leuven, B-3000 Leuven, Belgium

2. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

3. Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

4. ASM International, B-3001 Leuven, Belgium

5. ASM International, Phoenix, Arizona 85034-7200, USA

6. Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universiteé Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium

Funder

IMEC, Belgium

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928332

Reference32 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Frequency dispersion in III-V metal-oxide-semiconductor capacitors

3. Electrical modeling of compound semiconductor interface for FET device assessment