Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4775494
Reference16 articles.
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2. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
3. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
4. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
5. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
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