Temperature effects on metal-alumina-nitride-oxide-silicon memory operations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3446835
Reference9 articles.
1. Modeling TANOS Memory Program Transients to Investigate Charge-Trapping Dynamics
2. Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices
3. Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells
4. Program efficiency and high temperature retention of SiN/high-K based memories
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