Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices-Reference-Cited by-同舟云学术

Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices

Published:2008-10 Issue:10 Volume:52 Page:1491-1497
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang Gan,White Marvin H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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5. Integration technology of 30nm generation multi-level NAND flash for 64Gb NAND flash memory;Kwak;VLSI Technology, IEEE Symposium on,2007

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