Raman measurements of uniaxial strain in silicon nanostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4824291
Reference46 articles.
1. Surface-Dominated Transport Properties of Silicon Nanowires
2. Elastic properties of nanowires
3. On the size-dependent elasticity of silicon nanocantilevers: impact of defects
4. A Novel Approach for Active Pressure Sensors in Thin Film SOI Technology
5. The design and analysis of beam-membrane structure sensors for micro-pressure measurement
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