Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications
Author:
Affiliation:
1. School of Electrical Engineering, Korea University, Seoul 136-701, South Korea
Funder
Samsung
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4902969
Reference16 articles.
1. Nanoionics-based resistive switching memories
2. Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET
3. Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM
4. Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications
5. Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
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