Multistate Resistive Switching with Self-Rectifying Behavior and Synaptic Characteristics in a Solution-processed ZnO/PTAA Bilayer Memristor

Abstract

The progress of artificial synaptic devices is vital to the realization of the consciousness of effectual bioinspired neuromorphic computing systems. In this study, we fabricated an ITO/ZnO/PTAA/Ag artificial synaptic memristor based on a low-cost solution process. The fabricated device exhibited uniform gradual bipolar resistive switching with excellent endurance and self-rectifying behavior owing to the bilayer heterojunction structure of ZnO/PTAA. The growth of the conducting filament can be efficiently controlled by modulating the current compliance and voltage during the SET process. Modification of conductance states was also observed by simulations to stimuli, which are essential for synaptic function in neuromorphic computing. Various pulse measurements were performed to mimic synaptic behaviors, including long-term potentiation, long-term depression, spike-rate-dependent plasticity, paired-pulse facilitation, and post-tetanic potentiation. Moreover, we reveal that the real device shows an approximately similar pattern recognition rate as the ideal device owing to a more uniform conductance update.