Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications-Reference-Cited by-同舟云学术

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Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications

Published:2011-11-04 Issue:47 Volume:22 Page:475702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Liu Xinjun,Sadaf Sharif Md,Son Myungwoo,Shin Jungho,Park Jubong,Lee Joonmyoung,Park Sangsu,Hwang Hyunsang

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=47/a=475702/pdf

Reference39 articles.

1. Nanoionics-based resistive switching memories

2. Quantized conductance atomic switch

3. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

4. A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre

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