Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1823021
Reference44 articles.
1. The Light Induced Changes in A-Si: H Materials and Solar Cells—Where We are Now
2. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
3. Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivity
4. Saturation of the light‐induced defect density in hydrogenated amorphous silicon
5. Changes in the trapping and recombination process of hydrogenated amorphous silicon in the Staebler–Wronski effect
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1. Modification of the Photoelectric Properties of Undoped Hydrogenated Amorphous Silicon Films under Preliminary Illumination at Elevated Temperatures;Semiconductors;2020-04
2. Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon;Philosophical Magazine;2014-05-15
3. On the photoinduced effect in undoped a-Si:H films;Semiconductors;2013-06
4. The role of the recombination centers on the modulated photocurrent: Determination of the gap state parameters of semiconductors;Philosophical Magazine;2010-09-07
5. The nature of the defect states above midgap and their role in the light-induced metastability of a-Si:H;Journal of Non-Crystalline Solids;2006-06
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