Changes in the trapping and recombination process of hydrogenated amorphous silicon in the Staebler–Wronski effect
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358565
Reference24 articles.
1. Light-induced effects and stability in a-Si:H and related alloys
2. Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity
3. Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon
4. On the lack of correlation between film properties and solar cell performance of amorphous silicon‐germanium alloys
5. Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
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1. a-Si:H p-i-n Photodiode as a Biosensor;Photodetectors [Working Title];2018-11-05
2. The role of the recombination centers on the modulated photocurrent: Determination of the gap state parameters of semiconductors;Philosophical Magazine;2010-09-07
3. Photon enhanced diffusion model for α-Si:H photo-degradation;Semiconductor Science and Technology;2005-12-09
4. Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon;Journal of Applied Physics;2005-01-15
5. On the validity of defect density determinations by the recombination-regime modulated photoconductivity technique;Thin Solid Films;2004-02
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