The nature of the defect states above midgap and their role in the light-induced metastability of a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Various defect states ina-Si:H studied by modulated photoconductivity spectroscopy
2. Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon
3. An experimental evaluation of transient and modulated photocurrent density-of-states spectroscopies
4. Origin of charged gap states ina-Si:H and their evolution during light soaking
5. Density of states in the gap of amorphous semiconductors determined from modulated photocurrent measurements in the recombination regime
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon;Philosophical Magazine;2014-05-15
2. The role of the recombination centers on the modulated photocurrent: Determination of the gap state parameters of semiconductors;Philosophical Magazine;2010-09-07
3. Modulated photoconductivity in the high and low frequency regimes;Journal of Non-Crystalline Solids;2008-05
4. Modulated photocurrent as a powerful method to reveal predominant transport by the majority carriers of disordered semiconductors and to resolve all the kinds of probed gap states;Journal of Non-Crystalline Solids;2008-05
5. Low frequency modulated photoconductivity in semiconductors having multiple species of traps;Journal of Applied Physics;2007-05-15
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