Buried, self-aligned barrier layer structures for perovskite-based memory devices comprising Pt or Ir bottom electrodes on silicon-contributing substrates-Reference-Cited by-同舟云学术

Buried, self-aligned barrier layer structures for perovskite-based memory devices comprising Pt or Ir bottom electrodes on silicon-contributing substrates

Published:1998-01-15 Issue:2 Volume:83 Page:802-813
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Saenger K. L.,Grill A.,Kotecki D. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366761

Reference9 articles.

1. Barrier Properties for Oxygen Diffusion in a TaSiN Layer

2. Surface and interface studies of titanium silicide formation

3. Morphology dependent platinum silicide formation in oxygen ambient

4. Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

5. Thermal stability of Ir/polycrystalline-Si structure for bottom electrode of integrated ferroelectric capacitors

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