UHV Study of Hydrogen Atom Induced Etching of Amorphous Hydrogenated Silicon Thin Films-Reference-Cited by-同舟云学术

UHV Study of Hydrogen Atom Induced Etching of Amorphous Hydrogenated Silicon Thin Films

Published:2001-04-04 Issue:17 Volume:105 Page:3502-3509
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Zecho Thomas¹,Brandner Birgit D.¹,Biener Jürgen¹,Küppers Jürgen¹

Affiliation:

1. Experimentalphysik III, Universität Bayreuth, 95440 Bayreuth, Germany, and Max-Planck-Institut für Plasmaphysik (EURATOM Association), 85748 Garching, Germany

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0022611

Reference52 articles.

1. Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays

2. Role of hydrogen in the growth of hydrogenated microcrystalline silicon

3. Chemical equilibration of plasma-deposited amorphous silicon with thermally generated atomic hydrogen

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