Electronic properties of W-encapsulated Si cluster film on Si (100) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3695994
Reference40 articles.
1. Electronic properties on silicon-transition metal interface compounds
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal stability of amorphous Si-rich W silicide films composed of W-atom-encapsulated Si clusters;Journal of Applied Physics;2017-06-13
2. Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters;Journal of Applied Physics;2015-03-07
3. Low-barrier heterojunction of epitaxial silicide composed of W-encapsulating Si clusters with n-type Si;Applied Physics Letters;2012-11-19
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