Thermal stability of amorphous Si-rich W silicide films composed of W-atom-encapsulated Si clusters-Reference-Cited by-同舟云学术

Thermal stability of amorphous Si-rich W silicide films composed of W-atom-encapsulated Si clusters

Published:2017-06-13 Issue:22 Volume:121 Page:225308
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Okada Naoya¹²,Uchida Noriyuki²,Kanayama Toshihiko³^ORCID

Affiliation:

1. Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

2. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan

3. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8560, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference23 articles.

1. Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters

2. Electronic properties of W-encapsulated Si cluster film on Si (100) substrates

3. Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters

4. Low-barrier heterojunction of epitaxial silicide composed of W-encapsulating Si clusters with n-type Si

5. Fermi-level depinning and contact resistance reduction in metal/n-Ge junctions by insertion of W-encapsulating Si cluster films

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