Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters-Reference-Cited by-同舟云学术

Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters

Published:2015-03-07 Issue:9 Volume:117 Page:095302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Okada Naoya¹²³,Uchida Noriyuki²,Kanayama Toshihiko³⁴^ORCID

Affiliation:

1. Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

2. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

3. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

4. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology, KAKENHI

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4913859

Reference24 articles.

1. Recent advances in Schottky barrier concepts

2. The physics and chemistry of the Schottky barrier height

3. N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide

4. Characterization of erbium-silicided Schottky diode junction

5. Ultra-low series resistance W/ErSi2/n⁺-Si and W/Pd2Si/p⁺-Si S/D electrodes for advanced CMOS platform

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1. Fermi-level depinning in Mo/Si junctions by insertion of amorphous Si-rich Mo silicide film formed via gas-phase reactions of MoF₆ with SiH₄;Japanese Journal of Applied Physics;2024-01-04

2. Amorphous Si-rich tungsten silicide with a low work function near the conduction band edge of Si;Applied Physics Express;2020-05-13

3. Thermal stability of amorphous Si-rich W silicide films composed of W-atom-encapsulated Si clusters;Journal of Applied Physics;2017-06-13

4. Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4;The Journal of Chemical Physics;2016-02-24