Ultra-low series resistance W/ErSi2/n+-Si and W/Pd2Si/p+-Si S/D electrodes for advanced CMOS platform
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703425.pdf?arnumber=5703425
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low Work Function Ytterbium Silicide Contact for Doping-Free Silicon Solar Cells;ACS Applied Energy Materials;2020-03-09
2. Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters;Journal of Applied Physics;2015-03-07
3. Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal–insulator–silicon field-effect transistors;Japanese Journal of Applied Physics;2014-01-01
4. Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system;IEICE Electronics Express;2014
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