Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4-Reference-Cited by-同舟云学术

Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4

Published:2016-02-24 Issue:8 Volume:144 Page:084703
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Okada Naoya¹²,Uchida Noriyuki²,Kanayama Toshihiko³^ORCID

Affiliation:

1. Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

2. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

3. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Funder

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference19 articles.

1. Low-barrier heterojunction of epitaxial silicide composed of W-encapsulating Si clusters with n-type Si

2. Fermi-level depinning and contact resistance reduction in metal/n-Ge junctions by insertion of W-encapsulating Si cluster films

3. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

4. Recent advances in Schottky barrier concepts

5. Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters

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4. Gas-phase reactions of WF6 with SiH4 for deposition of WSi n films free from powder formation;Japanese Journal of Applied Physics;2019-03-14

5. Thermal stability of amorphous Si-rich W silicide films composed of W-atom-encapsulated Si clusters;Journal of Applied Physics;2017-06-13