Barrier Properties for Oxygen Diffusion in a TaSiN Layer-Reference-Cited by-同舟云学术

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Barrier Properties for Oxygen Diffusion in a TaSiN Layer

Published:1997-07-15 Issue:Part 2, No. 7B Volume:36 Page:L893-L895
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hara Tohru,Tanaka Masaru,Sakiyama Keizo,Onishi Shigeo,Ishihara Kazuya,Kudo Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Platinum metallization on silicon and silicates;Journal of Materials Research;2021-01-15

2. Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering;Thin Solid Films;2012-04

3. Oxidation resistance and mechanical property of cosputtered quasi-amorphous Ta–Si–N films under vacuum rapid thermal annealing;Surface and Coatings Technology;2010-11

4. TaSiN diffusion barriers deposited by reactive magnetron sputtering;Thin Solid Films;2006-08

5. Effect of nitrogen content on the degradation mechanisms of thin Ta–Si–N diffusion barriers for Cu metallization;Thin Solid Films;2006-04

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