Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2748327
Reference16 articles.
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2. J. A. Cooper, Jr., 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, 2004 (IEEE, Piscataway, NJ, 2004), p. 2507.
3. Contributions to the Density of Interface States in SiC MOS Structures
4. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
5. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
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