Characterization of Si1−xGex∕Si layers and depth profile of their heterobipolar transistor structures by high-resolution x-ray diffractometry and computer simulations-Reference-Cited by-同舟云学术

Characterization of Si1−xGex∕Si layers and depth profile of their heterobipolar transistor structures by high-resolution x-ray diffractometry and computer simulations

Published:2005-01-15 Issue:2 Volume:97 Page:024509
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bhagavannarayana G.,Halder S. K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1836008

Reference15 articles.

1. Optimized frequency characteristics of Si/SiGe heterojunction and conventional bipolar transistors

2. C. K. Maiti, in Physics of Semiconductor Devices, edited by V. Kumar and S. K. Agarwal (Narosa Publishing House, New Delhi, 1997), pp. 563–572.

3. Defects in epitaxial multilayers

4. Diffuse x-ray scattering of misfit dislocations at Si1−xGex/Si interfaces by triple crystal diffractometry

5. A fast X-ray method to determine Ge content and relaxation of partly relaxed Si1–xGex layers on silicon substrates

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