Optimized frequency characteristics of Si/SiGe heterojunction and conventional bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Proc. 2nd Int. Symp. Silicon-Molecular Beam Epitaxy;Iyer,1987
2. n‐Si/p‐Si1−xGex/n‐Si double‐heterojunction bipolar transistors
3. Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
4. GexSi1−xstrained‐layer heterostructure bipolar transistors
5. Proc. 2nd Int. Symp. Silicon-Molecular Beam Epitaxy;Daembkes,1987
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1. Ge-Si Alloys and Devices;Encyclopedia of RF and Microwave Engineering;2005-04-15
2. Characterization of Si1−xGex∕Si layers and depth profile of their heterobipolar transistor structures by high-resolution x-ray diffractometry and computer simulations;Journal of Applied Physics;2005-01-15
3. Determination of bandgap in SiGe strained layers using a pn heterojunction C-V;Acta Physica Sinica;2004
4. Optical characterization and metal–nonmetal transition of boron-doped Si1−xGex alloy;Solid-State Electronics;1999-01
5. Electrical and structural characterization of PtSi/p-Si[sub 1−x]Ge[sub x] low Schottky barrier junctions prepared by co-sputtering;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-03
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