A fast X-ray method to determine Ge content and relaxation of partly relaxed Si1–xGex layers on silicon substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. X‐ray rocking curve measurement of composition and strain in Si‐Ge buffer layers grown on Si substrates
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3. Measurement of stress and relaxation in Si1−xGexlayers by Raman line shift and x‐ray diffraction
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