Measurement of stress and relaxation in Si1−xGexlayers by Raman line shift and x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354587
Reference8 articles.
1. Bond-length relaxation in crystallineSi1−xGexalloys: An extended x-ray-absorption fine-structure study
2. Independent determination of composition and relaxation of partly pseudomorphically grown Si‐Ge layers on silicon by a combination of standard x‐ray diffraction and transmission electron microscopy measurements
3. Defects in epitaxial multilayers
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