Independent determination of composition and relaxation of partly pseudomorphically grown Si‐Ge layers on silicon by a combination of standard x‐ray diffraction and transmission electron microscopy measurements-Reference-Cited by-同舟云学术

Independent determination of composition and relaxation of partly pseudomorphically grown Si‐Ge layers on silicon by a combination of standard x‐ray diffraction and transmission electron microscopy measurements

Published:1993-04-26 Issue:17 Volume:62 Page:2051-2053
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bugiel E.,Zaumseil P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.109476

Reference6 articles.

1. Determination of the lattice constant of epitaxial layers of III-V compounds

2. Defects in epitaxial multilayers

3. X‐ray rocking curve measurement of composition and strain in Si‐Ge buffer layers grown on Si substrates

4. The influence of surfactants on growth modes in molecular-beam epitaxy: The growth of germanium layers on Si(100)

5. Misfit dislocation structure at a Si/SixGe1−xstrained‐layer interface

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