Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2975188
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1. Uprooting defects to enable high-performance III–V optoelectronic devices on silicon;Nature Communications;2019-09-20
2. Strained Si and Ge Channels;Nanoscale CMOS;2013-03-05
3. A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range;Journal of Applied Physics;2012-02-15
4. Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8Reverse-Graded Buffers;Journal of The Electrochemical Society;2012
5. Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition;physica status solidi (c);2010-12-17
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