Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3536508
Reference39 articles.
1. Dislocations in Relaxed SiGe/Si Heterostructures
2. Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation
3. In situ relaxed Si[sub 1−x]Ge[sub x] epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates
4. SiGe nanostructures
5. New virtual substrate concept for vertical MOS transistors
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