Effect of biaxial strain on exciton transitions of AlxGa1−xAs epitaxial layers on (001) GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344304
Reference26 articles.
1. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
2. Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAs
3. The effect of elastic strain on energy band gap and lattice parameter in III‐V compounds
4. The stresses and photoelastic effects in stripe geometry GaAs-GaAlAs DH lasers with masked and selective thermal oxidation (MSTO) structure
5. Energy band‐gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substrates
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1. Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors;Nature Communications;2015-05-28
2. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1−xAs;Japanese Journal of Applied Physics;2015-03-12
3. Deformation potentials of the direct band gap of n-Al0.25Ga0.75As from controlled microscopic stress fields;Journal of Applied Physics;2008-05
4. Thermoelastic stress in GaAs/AlGaAs quantum cascade lasers;Applied Physics Letters;2003-06-30
5. Band parameters for III–V compound semiconductors and their alloys;Journal of Applied Physics;2001-06
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