GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336070
Reference147 articles.
1. Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design
2. Material parameters of In1−xGaxAsyP1−yand related binaries
3. Lattice thermal resistivity of III–V compound alloys
4. Internal strain and photoelastic effects in Ga1−xAlxAs/GaAs and In1−xGaxAsyP1−y/InP crystals
5. Linear electro‐optic effects in zincblende‐type semiconductors: Key properties of InGaAsP relevant to device design
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