Effects of hydrostatic pressure, aluminium composition, and external magnetic field on intersubband and intrasubband transitions characteristics in symmetric potential quantum wells-Reference-Cited by-同舟云学术

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Effects of hydrostatic pressure, aluminium composition, and external magnetic field on intersubband and intrasubband transitions characteristics in symmetric potential quantum wells

Published:2024-10 Issue: Volume:691 Page:416364
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Thuy Huynh Thi Phuong^ORCID

Publisher

Elsevier BV

Reference79 articles.

1. Temperature and pressure dependences of the dielectric constants of semiconductors;Samara;Phys. Rev. B,1983

2. GaAS, alas, and algaas: Material parameters for use in research and device applications;Adachi;J. Appl. Phys.,1985

3. Effects of hydrostatic pressure and aluminum concentration on the conduction-electron g factor in GaAS-(ga, al)as quantum wells under in-plane magnetic fields;Reyes-Gómez;Phys. Rev. B,2008

4. Hydrostatic-pressure effects on the correlated electron–hole transition energies in GaAS–ga1–xalxas semiconductor quantum wells;Raigoza;Phys. Status Solidi b,2006

5. Influence of applied external fields on the nonlinear optical properties of a semi-infinite asymmetric algaas/GaAS quantum well;Ungan;Mater. Sci. Semicond. Process.,2021

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