Effects of hydrostatic pressure and aluminum concentration on the conduction-electrongfactor in GaAs-(Ga,Al)As quantum wells under in-plane magnetic fields-Reference-Cited by-同舟云学术

Effects of hydrostatic pressure and aluminum concentration on the conduction-electrongfactor in GaAs-(Ga,Al)As quantum wells under in-plane magnetic fields

Published:2008-03-10 Issue:11 Volume:77 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Reyes-Gómez E.,Raigoza N.,Oliveira L. E.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.115308/fulltext

Reference34 articles.

1. Optical detection of conduction-electron spin resonance in GaAs,Ga1−xInxAs, andGa1−xAlxAs

2. k→·p→perturbation theory in III-V compounds and alloys: a reexamination

3. Temperature Dependence of the Electron LandégFactor in GaAs

4. Temperature and density dependence of the electron Landégfactor in semiconductors

5. Electron g factor in quantum wells determined by spin quantum beats

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