Hydrostatic-pressure effects on the correlated electron–hole transition energies in GaAs–Ga1–xAlxAs semiconductor quantum wells
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. GaAs lower conduction-band minima: Ordering and properties
2. Temperature and pressure dependences of the dielectric constants of semiconductors
3. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
4. Photoluminescence studies of a GaAs-Ga1−xAlxAs superlattice at 8–300 K under hydrostatic pressure (0–70 kbar)
5. High-pressure studies of GaAs-Ga1−xAlxAs quantum wells of widths 26 to 150 Å
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4. Absorption and emission of longitudinal optical phonons by confined electrons in Pöschl–Teller quantum wells under the effects of the aluminum concentration, temperature, and hydrostatic pressure;Journal of Physics and Chemistry of Solids;2023-08
5. Comparison of the magneto-optical properties of the semi-parabolic well with those of the parabolic and rectangular wells under the combined influences of aluminum concentration and hydrostatic pressure;Journal of Physics and Chemistry of Solids;2022-02
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