Low‐dose implantation of Sb in Si1−xGexepitaxial layers: Correlation between electrical properties and radiation damage
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356991
Reference15 articles.
1. Regrowth of amorphous films
2. Ion beam induced epitaxy of deposited amorphous Si and Si‐Ge films
3. Solid phase epitaxy of stressed and stress‐relaxed Ge‐Si alloys
4. The growth of strained Si1−xGex alloys on 〈001〉 silicon using solid phase epitaxy
5. Kinetics of solid phase epitaxial regrowth in amorphized Si0.88Ge0.12measured by time‐resolved reflectivity
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1. Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD;Materials Science and Engineering: B;2001-12
2. Si/SiGe heterostructures for Si-based nanoelectronics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
3. Chapter 4 SiGe/Si processing;Processing and Properties of Compound Semiconductors;2001
4. Characterization of strained silicon quantum wells and Si1-xGexheterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures;Semiconductor Science and Technology;2000-03-01
5. Damage removal and boron diffusion during solid phase epitaxial growth of SiGe alloy layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-04
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