Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD-Reference-Cited by-同舟云学术

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Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

Published:2001-12 Issue:3 Volume:87 Page:277-281
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Rack M.J,Thornton T.J,Ferry D.K,Roberts Jeff,Westhoff Richard C,Robinson McDonald

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices

2. High electron mobility in modulation‐doped Si/SiGe

3. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy

4. UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications

5. High-mobility Si and Ge structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiGe Hetero FETs on silicon at cryogenic temperature;Journal de Physique IV (Proceedings);2002-05

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