Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon-Reference-Cited by-同舟云学术

Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon

Published:2017-02-06 Issue:6 Volume:110 Page:062105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohno Yutaka¹^ORCID,Inoue Kaihei¹,Fujiwara Kozo¹,Kutsukake Kentaro¹,Deura Momoko¹^ORCID,Yonenaga Ichiro¹,Ebisawa Naoki²,Shimizu Yasuo²^ORCID,Inoue Koji²,Nagai Yasuyoshi²,Yoshida Hideto³,Takeda Seiji³,Tanaka Shingo⁴,Kohyama Masanori⁴

Affiliation:

1. Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

2. The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

3. The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

4. Department of Energy and Environment, Research Institute of Electrochemical Energy, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4975814

Reference37 articles.

1. Effect of oxygen precipitation on the performance of Czochralski silicon solar cells

2. Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

3. Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

4. Gettering of metallic impurities in photovoltaic silicon

5. Gettering of iron by oxygen precipitates

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