Atomic structures of grain boundaries for Si and Ge: A simulated annealing method with artificial-neural-network interatomic potentials-Reference-Cited by-同舟云学术

Atomic structures of grain boundaries for Si and Ge: A simulated annealing method with artificial-neural-network interatomic potentials

Published:2023-02 Issue: Volume:173 Page:111114
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Yokoi Tatsuya^ORCID,Kato Hirotaka,Oshima Yu,Matsunaga Katsuyuki

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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