High-quality nonpolar 4H-AlN grown on 4H-SiC (112¯0) substrate by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2352713
Reference15 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Free and bound excitons in GaN∕AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112¯0) direction
3. Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
4. Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
5. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
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1. Polarization properties of AlN (101̅0) and (112̅0) non-polar surfaces: maximally localized Wannier functions study;The European Physical Journal Applied Physics;2019-10
2. Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(112¯0);Applied Physics Letters;2018-01
3. Interfacial atomic site characterization by photoelectron diffraction for 4H-AlN/4H-SiC($11\bar{2}0$) heterojunction;Japanese Journal of Applied Physics;2016-07-06
4. Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure;Journal of Applied Physics;2015-03-21
5. 4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC $(11\bar{2}0)$;IEEE Electron Device Letters;2014-03
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