Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure-Reference-Cited by-同舟云学术

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

Published:2015-03-21 Issue:11 Volume:117 Page:115301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shen Huaxiang¹,Zhu Guo-Zhen¹²,Botton Gianluigi A.¹²,Kitai Adrian¹³

Affiliation:

1. Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7, Canada

2. Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4L7, Canada

3. Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada

Funder

Natural Sciences and Engineering Research Council of Canada (Conseil de Recherches en Sciences Naturelles et en Génie du Canada)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914955

Reference55 articles.

1. H. Morkoc , Materials Properties, Physics and Growth ( Wiley-VCH Verlag Gmbh & Co. KGaA, 2008), Vol. 1, p. 1.

2. Growth and structure of sputtered gallium nitride films

3. White light-emitting diodes of GaN-based Sr2SiO4:Eu and the luminescent properties

4. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

5. Efficient current injection scheme for nitride vertical cavity surface emitting lasers

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