Sub-10 nm low current resistive switching behavior in hafnium oxide stack-Reference-Cited by-同舟云学术

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Published:2016-03-21 Issue:12 Volume:108 Page:123106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hou Y.¹²³,Celano U.²³,Goux L.²,Liu L.¹,Fantini A.²,Degraeve R.²,Youssef A.²,Xu Z.²³,Cheng Y.¹,Kang J.¹,Jurczak M.²,Vandervorst W.²³

Affiliation:

1. Institute of Microelectronics, Peking University, 100871 Beijing, China

2. IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium

3. Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Belgium

Funder

NSTMP

National Natural Science Foundation of China (NSFC)

China Scholarship Council (CSC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4944841

Reference37 articles.

1. Metal–Oxide RRAM

2. B. Govoreanu , G. S. Kar , Y. Chen , V. Paraschiv , S. Kubicek , A. Fantini , I. P. Radu , L. Goux , S. Clima , R. Degraeve , N. Jossart , O. Richard , T. Vandeweyer , K. Seo , P. Hendrickx , G. Pourtois , H. Bender , L. Altimime , D. J. Wouters , J. A. Kittl , and M. Jurczak , in International Electron Devices Meeting Technical Digest (2011), pp. 31.6.1–31.6.4.

3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

4. In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

5. Oxide Heterostructure Resistive Memory

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate evaluation method for HRS retention of VCM ReRAM;APL Materials;2024-03-01

2. Non-traditional New Structure Devices;Handbook of Integrated Circuit Industry;2023-11-28

3. Atomic-level Tracking and Analyzing of Quantum-dot Motion Steered by an Electrostatic Field Positioned by a Nanorobotic Manipulation Tip;2023 IEEE International Conference on Robotics and Automation (ICRA);2023-05-29

4. Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in HfO2;Physical Review Letters;2023-02-27

5. Resistive Switching Crossbar Arrays Based on Layered Materials;Advanced Materials;2023-01-13