Scattering from strain variations in high‐mobility Si/SiGe heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360549
Reference22 articles.
1. Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures
2. Defects in epitaxial multilayers
3. Defects in epitaxial multilayers
4. Imaging of Misfit Dislocation Formation in Strained Layer Heteroepitaxy by Ultrahigh Vacuum Scanning Tunneling Microscopy
5. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
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