Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Author:

Paik Hanjong1ORCID,Chen Zhen2ORCID,Lochocki Edward3ORCID,Seidner H. Ariel1,Verma Amit4ORCID,Tanen Nicholas15,Park Jisung1,Uchida Masaki6ORCID,Shang ShunLi7,Zhou Bi-Cheng7,Brützam Mario8,Uecker Reinhard8,Liu Zi-Kui7,Jena Debdeep15,Shen Kyle M.39,Muller David A.29ORCID,Schlom Darrell G.19

Affiliation:

1. Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA

2. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA

3. Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA

4. Department of Electrical Engineering, IIT Kanpur, Kanpur 208016, India

5. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

6. Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan

7. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

8. Leibniz Institute for Crystal Growth, D-12489 Berlin, Germany

9. Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA

Funder

National Science Foundation

SRC | Microelectronics Advanced Research Corporation

DOD | USAF | AFMC | Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

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