Effect of nitridation on polarity, microstructure, and morphology of AlN films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1646222
Reference20 articles.
1. Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy
2. Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates
3. Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
4. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
5. Characterization of free-standing hydride vapor phase epitaxy GaN
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